Improving NAND Endurance by Dynamic Program and Erase Scaling

paper sharing:
title: Improving NAND Endurance by Dynamic Program and Erase Scaling
where: HotStorage13

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1. flash的endurance和program時用的電壓有關~ (電壓越大~命越短)
2. 承上，所以program speed和endurance就是一個tradeoff囉。(電壓越大寫越快)
3 他就弄了一個FTL叫 DPES-FTL (dynamic program and erase scaling (DPES))，希望可以提高endurance而又不要害到write speed太多

how ? 
→ 兩個write req之間的idle time時用小電壓

如何知道會有idle time?
→ by estimation

contributions
1. endurance-programSpeed model
2. DEPS-FTL